Image sensing device and manufacture method thereof

ABSTRACT

An image sensing device for receiving an incident light having an incident angle and photo signals formed thereby is provided. The image sensing device includes a micro prism and a micro lens for adjusting the incident angle and converging the incident light, respectively, a photo sensor for converting the photo signals into electronic signals, and an IC stacking layer for processing the electronic signals.

FIELD OF THE INVENTION

The present invention refers to an optoelectronic device, in particularto a structure and arrangement of an image sensing device.

BACKGROUND OF THE INVENTION

Structure of Image Sensor

As the applications of the optoelectonic device become more and morepopular, the demands for the image sensing device increase rapidly. Ingeneral, typical image sensors can be categorized into two main parts,which are the charge coupled device (CCD) and the complementarymetal-oxide semiconductor (CMOS).

An image sensor is used for recording a change of a photo signal formedby an image and converting the photo signal into an electronic signal.After recording and processing the electronic signal, a digital image isgenerated for further outputting or recording. In general, the imagesensor is formed by a plurality of photo sensing devices, which areeither CCD elements or COMS elements.

A CCD image sensor is formed by a capacitor array having a plurality ofmetal oxide semiconductor (MOS) elements arranged densely. Themanufacturing of the CCD is to deposit a silicon oxide layer on a N type(or P type) single crystal silicon substrate. Then, a PN type MOScapacitor receiving a photo signal is formed on the silicon oxide layer.The MOS capacitor is used for converting the photo signal into anelectronic signal. Moreover, the dielectric layer and the signaltransmitting circuit are arranged in the boundary of the MOS capacitorarray and then integrated into the CCD elements on the single crystalsubstrate with the powering device. Thus, a CCD image sensor isaccomplished.

On the other hand, the CMOS imager sensor is a semiconductor forrecording the change of the photo signals. The CMOS mainly includessilicon (Si) and germanium (Ge), so that the N type and P typesemiconductors can exist in the CMOS element. Therefore, the currentscan be generated by these two complementary semiconductors. Afterprocessing and recording such currents, a digital image can be outputtedor recorded. The difference between the CCD and CMOS is that the CCDelement is formed on the single crystal semiconductor substrate whilethe CMOS element is formed on the metal oxide semiconductor substrate.However, the working principle of CCD and COMS are identical.

In addition to the abovementioned semiconductor photo sensing deviceincluded in the image sensor for converting the photo signals intoelectronic signals, a plurality of color filters are also included inthe image sensor in order to output the color image. Typically, thecolor filter array included in the mage sensor can be either the RGBcolor filter array or YMC color filter array.

In the conventional technology, the color filter array is disposed abovethe semiconductor photo sensing device. Furthermore, a micro lens array,such as a convex array, is disposed above the color filter array forconverging or condensing the incident light. With the aid of the convexarray, the incident light can be condensed to a smaller beam andprojected to the specific area of the semiconductor photo sensingdevice, so as to increase the photosensitivity of the image sensor.Therefore, the typical arrangement of the image sensor, which is formedeither by CCD or CMOS semiconductor photo sensing device, mainlyincludes a lens array, a color filter array and a semiconductor photosensing device array arranged in sequence along a direction of theincident light.

Please refer to FIG. 1, which shows an arrangement of the conventionalCMOS photo sensing element. As can be seen from FIG. 1, the CMOS photosensing element 10 includes a substrate 11, a first photodiode 12 a, asecond photodiode 12 b, a third photodiode 12 c, a metal opaque layer13, a first color filter layer 14 a, a second color filter layer 14 b, athird color filter layer 14 c, a micro lens layer 15 and a light beam16. Typically, the first, second and third color filter layers are usedfor filtering the green, red and blue light respectively.

No matter it is a CCD or a COMS image sensor, a plurality of photosensing elements, which is also called pixels, are included therein forconstructing a hundred thousand level or a million level image sensor.For a CCD image sensor, the electronic photo signals generated in everypixel of each column is transmitted to a buffer in sequence, and thenoutputted to an AC/DC (ADC) converter disposed near CCD photo sensingelements for amplifying and digitizing the analog electronic signals.The amplified and digitized signals are then transmitted to a processingchip. However, for a COMS image sensor, each pixels is collocated withan ADC converter, so as to amplify and digitize the electronic signalgenerated by each COMS pixel directly. Therefore, the main differencesbetween the CMOS image sensor and the CCD image sensor are thedisposition and the number of the ADC converter.

Please refer to FIG. 2, which shows the pixels layout of a CMOS imagesensor, which includes a CMOS photo sensing element and an ADC converterin each pixel. As can be seen from FIG. 2, the CMOS image sensor 20includes a plurality of pixels 21, each of which has a CMOS image sensor22 and an ADC converter 23. The feature of the COMS image sensor is thateach CMOS image sensor 22 is collocated with an ADC converter 22, sothat the electronic signal generated by each COMS pixel can be amplifiedand digitized directly, and then transmitted to a processing chip fordigital signals processing.

Optical Crosstalk, Brightness Difference and Pixel Layout Uniformity

No matter it is the CCD or CMOS image sensor being used, the opticalcrosstalk effect is always a problem to the designer of the imagesensor. The optical crosstalk effect means the incident lighttransmitted into a pixel is deflected to the adjacent pixel(s), so thatthe additional photo energy is absorbed by the adjacent pixel(s) andthus the original photo energy which should be sensed by the adjacentpixel(s) will be affected by the deflected incident light.

Please refer to FIG. 3, which schematically explains the crosstalkeffect of an image sensor. As can be seen from the FIG. 3, theconventional image sensor 30 includes a first, a second and a thirdmicro lenses 31 a-c, a first, a second and a third color filters 32 a-c,a light shield 33, an IC stacking layer 34 and a first, a second and athird photodiodes 35 a-c.

In a normal condition, a normal incident light 37 a passing through thesecond micro lens 31 b should be projected to and absorbed by the secondphotodiode 35 b. However, in a crosstalk condition, a crosstalk incidentlight 37 b having a larger incident angle 38 b passing through thesecond micro lens 31 b will be projected to and absorbed by the firstphotodiode 35 a. Therefore, the crosstalk effect is dependent on therespective incident angles 38 a, 38 b of the incident lights 37 a, 37 b.

The brightness difference also results from the difference of theincident angle. The generated electrical signal in each photodiode isrelated to the sensed intensity of the incident light. However, thesensed intensity of the incident light varies with the incident angle ofthe incident light. Therefore, the incident angle also effects thebrightness difference in each photodiode.

Please refer to FIGS. 12 and 13 which show the top views of two pixellayouts of the COMS image sensor, respectively. As can be seen from FIG.12, an uniform decenter pixel array 110 includes a plurality of pixels111, each of which includes a CMOS photodiode 112 and an ADC converter113. The uniform decenter pixel array 110 further includes a micro lensarray, so that each micro lens 114 is formed on each of the pixels 111for converging the incident light into the CMOS photodiode 112. In suchan uniform decenter pixel array 110, the pixel layout is manufactured ina 0.35 μm process, and the area ratio of the CMOS photodiode 112 to theADC converter 113 in each pixel 111 is about 0.4˜0.6. Since thephotodiode 112 in each pixel 111 is disposed in the lower portion of thepixel, each micro lens 114 should be disposed decenteredly, so as toconverge the incident light into the CMOS photodiode 112.

On the other hand, when the process of the CMOS pixel array is updatedfrom the 0.35 μm process to the 0.13 μm one, an non-uniform decenterpixel array 120 is provided, as shown in FIG. 13. The non-uniformdecenter pixel array 120 includes a plurality of pixels 121, each ofwhich includes a CMOS photodiode 122 and an ADC converter 123. Thenon-uniform decenter pixel array 120 further includes a micro lensarray, SQ that each of micro lens 124 is also formed on the each pixel121 for converging the incident light into the photodiode 122. In suchan non-uniform decenter pixel layout processed in 0.13 μm, four pixelsare grouped into a pixel set, in which the four photodiodes 122 aredisposed adjacent to one another and the ADC converters 123 are disposedaround the four photodiodes 122 in each pixel set. However, the arearatio of the CMOS photodiode 122 to the ADC converter 123 in each pixel121 is also maintained at about 0.4˜0.6. However, since four photodiodes122 in each pixel set are grouped together, the layout of the micro lensarray 124 is changed to an non-uniform decenter layout, which may resultin the overlapped layout of the micro lens array 124, as shown in FIG.13.

Since the optical crosstalk effect, the brightness difference effect andthe pixel layout uniformity are the factors affecting the image qualityof the image sensor, most manufacturers are devoted themselves to findthe solutions for improving the image quality of the image sensor. Inthe prior art, there are two known technical schemes which can be usedfor improving the image quality of the image sensor. The two technicalschemes are described as follows.

Reference 1: Taiwan Patent No. TW200525773

An image sensor which can receive an uniform photo energy in a chip,especially in the areas between the central and the boundary of thechip, is provided in the reference 1. A further aspect of this imagesensor is to provide an image sensor for solving the problem resultingform the photo crosstalk effect.

The image sensor provided in the reference 1 includes a micro lens layerhaving a plurality of micro lenses, each of which is corresponded to asensing area of a sensor chip. The feature of such an image sensor ischaracterized in that the size of each micro lens is increased with thedistance between the lens and the central of the sensor chip, so thatthe photo sensing uniformity in each sensing area of the sensor chip canbe achieved.

Furthermore, please refer to FIG. 4, which shows a further image sensorlayout provided in the reference 1 for abating the problem resultingform the photo crosstalk effect. As can been seen from FIG. 4, the lowerpart of the drawings is the conventional design of the image sensor,while the upper part of the drawings is the improved design of the imagesensor. In the conventional design, each micro lens 42 is aligned withits corresponding color filter 43, IC stacking layer 44 and sensing area45, respectively. However, in the improved design, the dispositions ofthe lenses are varied with their distance from the center of the sensorchip center. Since it is very complicated and inefficient to disposeevery micro lenses, the micro lens layer 42 are categorized into severalgroups according to their distances from the center of the sensor chipcenter. As can been seen from FIG. 4, the micro lenses in the Group 1,which is adjacent to the center of the sensor chip, keep in the samedisposition as those in the conventional design. As to Groups 2 and 3,which are further away from the center of the sensor chip, the microlens set in each group are shifted (the shift distances in this case are0.07 μm and 0.14 μm for Group 2 and Group 3, respectively) in adirection toward the center of the sensor chip, so that the effectresults from different incident angles can be mitigated.

Reference 2: U.S. Pat. No. 6,803,250

In the reference 2, an image sensor with a complementary concave andconvex lens layers is provided. Please refer to FIG. 5, which shows animage sensor structure provided in the reference 2. As can be seen fromFIG. 5, the image sensor 50 includes a substrate 51 with a photoactiveregion 52 embedded therein. A first planarizing passivation layer 53having a pair of patterned first conductor layers 54 a, 54 b formedtherein and a second planarizing passivation layer 55 having a pair ofpatterned second conductor layers 56 a, 56 b formed therein are disposedabove the substrate 51 in sequence. A color filter 58 is furtherdisposed above the second planarizing passivation layer 55 with a firstspacer layer 57 formed therebetween. A convex lens 510 is furtherdisposed above the color filter 58 with a second spacer layer 59 formedtherebetween. The first and second planarizing passivation layers 53, 55are formed of a dielectric material transparent for adjusting therefraction angle of the incident light. With such a configurationdescribed above, the first and second planarizing passivation layers 53,55 are operated as a concave lens to be in combination with the convexlens 510 for enhancing the optical performance of the image sensor.However, such an image sensor still has the problem relating to thephoto crosstalk effect and the brightness difference.

Base on the above, the conventional image sensors still have theproblems in eliminating the crosstalk effect and the brightnessdifference. Therefore, it is necessary to provide a novel technicalscheme to solve the abovementioned problems.

SUMMARY OF THE INVENTION

It is a first aspect of the present invention to provide an imagesensing device receiving an incident light having an incident angle andphoto signals formed thereby. The image sensing device includes a microprism and a micro lens for adjusting the incident angle and convergingthe incident light, respectively, a photo sensor for converting thephoto signals into electronic signals, and an IC stacking layer forprocessing the electronic signals.

Preferably, the incident light further having a chief ray angle (CRA)formed thereby, and the micro prism decreases the chief ray angle (CRA)of the incident light.

Preferably, the micro prism is formed by one of dielectric material andpolymer material.

Preferably, the micro prism has a width in the order of micrometers, sois the photo senor.

Preferably, the image sensing device further includes an intermediatelayer separating the micro lens and the micro prism for increasing therefraction of the incident light.

Preferably, the intermediate layer is formed by one selected from thegroup consisting of silicon dioxide, silicon nitride, siliconoxy-nitride and polymer material.

Preferably, the intermediate layer includes a plurality of spacers.

Preferably, the intermediate layer includes a plurality of colorfilters.

Preferably, the image sensing device along a direction of the incidentlight includes the micro lens disposed above the intermediate layer, theintermediate layer disposed above the micro prism, the micro prismdisposed above the IC stacking layer, and the IC stacking layer disposedabove the photo sensor.

Preferably, an arrangement of the image sensing device along a directionof the incident light includes the micro prism disposed above theintermediate layer, the intermediate layer disposed above the microlens, the micro lens disposed above the IC stacking layer, and the ICstacking layer disposed above the photo sensor.

Preferably, the micro prism, the micro lens, and the photo sensor areconfigured in a non-decenter arrangement.

Preferably, the micro prism, the micro lens, and the photo sensor areconfigured in a decenter arrangement.

Preferably, the decenter arrangement includes a regular decenterarrangement and an irregular decenter arrangement.

Preferably, an arrangement of the image sensing device along a directionof the incident light includes the micro prism disposed above the microlens, the micro lens disposed above the IC stacking layer, and the ICstacking layer disposed above the photo sensor.

It is a further aspect of the present invention to provide a method formanufacturing an image sensing device. The method includes the steps ofproviding a substrate, forming a photo sensor on the substrate by afirst IC process, forming an IC stacking layer on the photo sensor by asecond IC process, forming a micro lens on the IC stacking layer by afirst integrated optical process, and forming a micro prism on the microlens by a second integrated optical process.

It is a further aspect of the present invention to provide a method formanufacturing an image sensing device. The method includes the steps ofproviding a substrate, forming a photo sensor on the substrate by afirst IC process, forming an IC stacking layer on the photo sensor by asecond IC process, forming a micro prism on the IC stacking layer by afirst integrated optical process, forming an intermediate layer on themicro prism by second integrated optical process, and forming a microlens on the intermediate layer by a third integrated optical process.

It is a further aspect of the present invention to provide a method formanufacturing an image sensing device. The method includes the steps ofproviding a substrate, forming a photo sensor on the substrate by afirst IC process, forming an IC stacking layer on the photo sensor by asecond IC process, forming a micro lens on the IC stacking layer by afirst integrated optical process, forming an intermediate layer on themicro lens by a second integrated optical process; and forming a microprism on the intermediate layer by a third integrated optical process.

Preferably, the substrate is a semiconductor substrate.

Preferably, the micro prism is made of a dielectric material which ispervious to light.

Preferably, the micro prism is manufactured by one selected from thegroup consisting of gray masking process, photoresist process andetching process.

Preferably, the intermediate layer is manufactured by one selected fromthe group consisting depositing one of silicon oxide, silicon nitrideand silicon oxynitride with PECVD process.

Preferably, the intermediate layer is made of polymer material.

It is a further aspect of the present invention to provide an imagesensing module including a package lid, a plurality of micro prismsdisposed on the package lid and adjusting an incident angle of anincident light, and a plurality of photo sensors converting the photosignals of the incident light into the electronic signals.

Preferably, each of the plurality of photo sensors includes a micro lensintegrated therewith.

Preferably, a chief ray angle (CRA) of the incident light is adjusted byvarying a dimension of each of the plurality of micro prisms.

Preferably, each of the plurality of micro prisms is formed by one ofdielectric material and polymer material.

Preferably, each of the plurality of micro prisms has a width in theorder of micrometers.

Preferably, a dimension of each of the plurality of micro prisms isvaried with its position in the package lid.

BRIEF DESCRIPTION OF THE DRAWINGS

The above objects and advantages of the present invention will becomemore readily apparent to those ordinarily skilled in the art afterreviewing the following detailed descriptions and accompanying drawings,in which:

FIG. 1 shows an arrangement of the conventional CMOS photo sensingelement;

FIG. 2 shows the pixels layout of a CMOS image sensor according to theprior art;

FIG. 3 schematically explains the crosstalk effect of an image sensor.

FIG. 4 shows a further image sensor layout according to the prior art;

FIG. 5 shows a further image sensor structure according to the priorart;

FIG. 6 schematically explains the working principle of a micro prism;

FIG. 7 schematically shows the structure of an image sensor according toa first embodiment of the present invention;

FIG. 8 schematically shows the structure of an image sensor according toa second embodiment of the present invention;

FIG. 9 schematically shows the structure of an image sensor according toa third embodiment of the present invention;

FIG. 10 schematically shows the structure of an image sensor accordingto a fourth embodiment of the present invention;

FIG. 11 schematically shows the configuration of an image sensing moduleaccording to the fifth embodiment of the present invention;

FIGS. 12 and 13 respectively show the top views of two pixel layouts ofthe COMS image sensor according to the prior art;

FIG. 14 schematically shows the compact camera module according to thesixth embodiment of the present invention; and

FIG. 15 schematically shows an alternative layout of a pixel array of animage sensing device and the arrangement of the optical elements in eachpixel.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

The present invention will now be described more specifically withreference to the following embodiments. It should to be noted that thefollowing descriptions of preferred embodiments of this invention arepresented herein for purposes of illustration and description only; itis not intended to be exhaustive or to be limited to the precise formdisclosed.

In an image sensing device according to the present invention, a microprism array is incorporated thereinto, so that the light with a largerchief ray angle, which is an angle between the incident light and thevertical line, can be adjusted to a light with a smaller incident anglefor decreasing the optical crosstalk effect among adjacent pixels of theimage sensing device.

Please refer to FIG. 6, which schematically explains the workingprinciple of a micro prism. The micro prism 62 has an inclined angle α,which is defined by the angle between the normal 64 a of the entranceplane 64 and the vertical line 65 a. The inclined angle α of the microprism 62 can also be defined and adjusted with the dimension of themicro prism 62. As can be seen from FIG. 6, the inclined angle α is thefunction of a first side a, a second side b and a third side p of themicro prism 62, which satisfies the following equation:α=tan⁻¹[(b−a)/p]  (1)

When an incident light 67 a with a chief ray angle β enters the entranceplane 64 of the micro prism 65, the transmission direction of theincident light will follow Snell's Law: n₁sin θ₁=n₂sin θ₂, wherein n₁denotes the refractive index of the medium (air) outside the micro prism62, θ₁ denotes the incident angle of the light entering the entranceplane 64 of the micro prism 62, n₂ denotes the refractive index of themicro prism 62, and θ₂ denotes the refractive angle of the lightentering the entrance plane 64. Since the normal of the entrance plane64 of the micro prism 62 is inclined an angle α with respect to thevertical line 65 a, the incident angle θ₁ of the light entering theentrance plane 64 should be equaled to the sum of the inclined angle αand the chief ray angle β, this is to say: θ₁=α+β; In most cases, it ispreferable to make the incident light 67 a with a chief ray angle βentering the entrance plane 64 of the micro prism 65 be deflected to thelight parallel to the vertical line 65 a when transmitting through themicro prism 62. Therefore, the refractive angle θ₂ should be controlledto be equaled to the inclined angle α. That is to say, the micro prism62 of the present invention is used to deflect an light with an chiefray angle β entering the micro prism 62 to an exit light 67 b which isparallel to the vertical line 65 a. Since the incident light with anlarger chief ray angle can be decreased and the distribution of thelight energy can also be uniformed with the aid of the micro prism, theproblems of the image sensor resulting from the crosstalk effect andbrightness difference can be overcome.

It should be noted that the installation of the micro prism isapplicable to various types or different configurations of the imagesensors. Furthermore, it is also advantageous that the inclined angel αof the micro prism can be adjusted by changing the dimension thereof.Since the chief ray angle of the incident light can be varied in eachpixel of the image sensor, the dimension of the micro prismcorresponding to each pixel can be varied depending on its position.Moreover, since the dimension of each pixel of the image sensor is inthe order of micrometers, the dimensions of the incorporated micro prismand other optical elements in each pixel are also in the order ofmicrometers. The manufacturing process of the image sensor of thepresent invention is compatible with the known IC processes andintegrated optical processes.

Please refer to FIG. 7, which schematically shows the structure of animage sensor according to a first embodiment of the present invention.For clarity, a conventional image sensor structure is also shown in FIG.7 for explicitly expressing the difference of these two image sensorstructures. As can be seen from FIG. 7, the part (a) is a typicalstructure of the conventional image sensor, while the part (b) is thestructure of the image sensor according to the first embodiment of thepresent invention. Both of the two structures include a substrate 70having a photo sensor 71 and an IC stacking layer 72 sequentially formedthereon. Preferably, the substrate 70, the photo sensor 71 and the ICstacking layer 72 are manufactured by a compatible IC process. Above theIC stacking layer 72, it is incorporated with the optical elements, suchas at least one intermediate layer 73 and a micro lens 74, which areformed by a compatible integrated optical process. As having beendescribed above, the main difference between the image sensor structureaccording to this embodiment of the present invention and theconventional image sensor structure is the installation of the microprism 75. In this embodiment, the micro prism 75 is formed above themicro lens by the integrated optical process. With the installation ofthe micro prism, the larger chief ray angle (for example 20°) of anincident light 77 can be adjusted to a smaller one (for example, 0°,which means the direction of the light exiting the exit plane of themicro prism is perpendicular to the exit plane of the micro prism) whenthe light exits from the micro prism 75, so as to decrease the crosstalkeffect among the adjacent pixels.

Please refer to FIG. 8, which schematically shows the structure of animage sensor according to a second embodiment of the present invention.Similarly, a conventional image sensor structure is also shown in part(a) of FIG. 8 for explicitly expressing the different features of theimage sensor structure according to the second embodiment. In thisembodiment, the image sensor structure includes a substrate 80 having aphoto sensor 81 and an IC stacking layer 82 sequentially formed thereon.Preferably, the substrate 80, the photo sensor 81 and the IC stackinglayer 82 are manufactured by a compatible IC process. Above the ICstacking layer 82, it is incorporated with the optical elements, such asat least one intermediate layer 83, a micro prism 84 and a micro lens85, which are formed by a compatible integrated optical process. Incomparison with the first embodiment of the present invention, theinstalled micro prism 84 is disposed between the micro lens 85 and theat least one intermediate layer 83. Similarly, with the installation ofthe micro prism 84, the larger chief ray angle (for example 20°) of anincident light 87 can be adjusted to a smaller one (for example, 0°,which means the direction of the light exiting the exit plane of themicro prism is perpendicular to the exit plane of the micro prism) whenthe light exits from the micro prism 84, so as to decrease the crosstalkeffect among the adjacent pixels.

Please refer to FIG. 9, which schematically shows the structure of animage sensor according to a third embodiment of the present invention.Similarly, a conventional image sensor structure is also shown in part(a) of FIG. 9 for explicitly expressing the different features of theimage sensor structure according to the third embodiment. In thisembodiment, the image sensor structure still includes a substrate 90having a photo sensor 91 and an IC stacking layer 92 sequentially formedthereon. Preferably, the substrate 90, the photo sensor 91 and the ICstacking layer 92 are manufactured by a compatible IC process. Above theIC stacking layer 92, it is incorporated with the optical elements, suchas at least one intermediate layer 94, a micro prism 93 and a micro lens95, which are formed by a compatible integrated optical process. Incomparison with the first and the second embodiments of the presentinvention, the installed micro prism 93 in the third embodiment of thepresent invention is disposed below the at least one intermediate layer94, while the micro lens 95 is disposed above the at least oneintermediate layer 94.

Similarly, with the installation of the micro prism 93, the larger chiefray angle (for example 20°) of an incident light 96 can be adjusted to asmaller one (for example, 0°, which means the direction of the lightexiting the exit plane of the micro prism is perpendicular to the exitplane of the micro prism) when the light exits from the micro prism 93,so as to decrease the crosstalk effect among the adjacent pixels.

Please refer to FIG. 10, which schematically shows the structure of animage sensor according to a fourth embodiment of the present invention.Similarly, a conventional image sensor structure is also shown in part(a) of FIG. 10 for explicitly expressing the different features of theimage sensor structure according to the fourth embodiment. In thisembodiment, the image sensor structure still includes a substrate 100having a photo sensor 101 and an IC stacking layer 102 sequentiallyformed thereon. Preferably, the substrate 100, the photo sensor 101 andthe IC stacking layer 102 are manufactured by a compatible IC process.Furthermore, above the IC stacking layer 102, it is incorporated withthe optical elements, such as at least one intermediate layer 104, amicro lens 103 and a micro prism 105, which are formed by a compatibleintegrated optical process. In comparison with the first, the second andthe third embodiments of the present invention, the installed microprism 105 is disposed above the at least one intermediate layer 104 andthe micro lens prism is embedded within the intermediate layers 104.

Similarly, with the installation of the micro prism 105 and thedisposition of the micro lens 103, the larger chief ray angle (forexample 20°) of an incident light 107 can be adjusted to a smaller one(for example, 0°, which means the direction of the light exiting theexit plane of the micro prism is perpendicular to the exit plane of themicro prism) when the light exits from the micro prism 105, so as todecrease the crosstalk effect among the adjacent pixels.

In a preferred embodiment of the present invention, the substrates 70,80, 90, and 100 used in the abovementioned embodiments are thesemiconductor substrates. Furthermore, the photo sensors 71, 81, 91 and101 embedded in the substrates 70, 80, 90, and 100, respectively, can beany types of photodiodes. The IC stacking layers 72, 82, 92, and 102include the integrated circuits used for processing the electronicsignals generated by the photodiodes.

Moreover, the micro lenses 74, 85, 95, and 103 are formed by thedielectric materials or polymer materials which are pervious to light.Preferably, the micro lenses 74, 85, 95, and 103 are the convex lensesused for converting the incident light in order to increase theabsorption of the photo energy in the photo sensor. The micro prisms 75,84, 93 and 105 are also made of the dielectric material which ispervious to light. As described above, the inclined angle of the microprisms 75, 84, 93 and 105 can be adjusted by varying the dimensions (78a, 78 b; 88 a, 88 b; 98 a, 98 b; and 108 a, 108 b) of the micro prisms.Furthermore, in a preferred embodiment, the abovementioned micro prismsare also made by the silicon oxide, silicon nitride, or siliconoxinitride material and manufactured by one selected from the groupconsisting of gray masking, photoresist process and etching process.

Furthermore, the intermediate layers 73, 83, 94 and 104 are also made ofpolymer materials. Preferably, the intermediate layers 73, 83, 94 and104 are manufactured by depositing one selecting from the groupconsisting of of the silicon oxide, silicon nitride and siliconoxynitride with PECVD process. In an alternative embodiment, a pluralityof spacers and color filters (not shown) are formed within theintermediate layers 73, 83, 94 and 104 for improving the color and imageproperty of the image sensor.

In a fifth embodiment of the present invention, the micro prism arrayand a micro lens array can be disposed on separate sides of an imagesensing module. Please refer to FIG. 11, which schematically shows theconfiguration of an image sensing module according to the fifthembodiment of the present invention. As can be seen from FIG. 11, theimage sensing module includes a package lid 109 having a micro prismarray formed thereon and a substrate 100′ having a plurality of photosensors (i.e. the pixel array, not shown) embedded thereon. On thesubstrate 100′, a micro lens array 103 is formed in such a way that eachof the micro lens array 103 is integrated with a corresponding photosensor and is corresponded to a corresponding micro prism 105.Accordingly, with such a configuration of the photo sensing module, thecrosstalk effect and the brightness difference result existing in theconventional photo sensing module can be effectively removed, as shownin the left part of FIG. 11.

As described above, the uniform decent arrangement (shown in FIG. 12) orthe non-uniform decent arrangement (shown in FIG. 13) of the opticalelements in each pixel is well known in the prior art. All thesearrangements are also applicable in any embodiments of the presentinvention.

Please refer to FIG. 14, which schematically shows the compact cameramodule according to the sixth embodiment of the present invention. Ascan be seen from FIG. 14, each pixel of the compact camera module 130includes a photo sensor 133, a micro lens 132 and a micro prism 131constructed as the fourth embodiment of the present invention. The mainfeatures of the compact camera module according to the sixth embodimentof the present invention are characterized in that the dimension of eachmicro prism 131 corresponding to each pixel can be varied depending oneach pixel position in the chip set of the photo sensor. With such adesign, the different incident lights with different CRA can be adjustedby the respective micro prism when the light exits from the micro prism,so as to decrease the crosstalk effect among the adjacent pixels.

Please refer to FIG. 15, which schematically shows an alternative layoutof a pixel array of an image sensing device and the arrangement of theoptical elements in each pixel. Similar to the pixel array 120 providedin FIG. 13, the pixel layout in FIG. 15 is also configured in annon-uniform decenter arrangement. The main features of the pixel layout140 according to this embodiment of the present invention arecharacterized in that each pixel 141 includes a photo sensor 144, amicro lens 143 and a micro prism which are configured in a decenterarrangement. However, with the incorporation of the micro prism, thelight spot converged on the photo sensor 144 can be shifted and adjustedby the micro prism, so that the possible overlapped layout of the microlens array 124, as shown in FIG. 13, can be avoided.

While the invention has been described in terms of what is presentlyconsidered to be the most practical and preferred embodiments, it is tobe understood that the invention needs not be limited to the disclosedembodiments. On the contrary, it is intended to cover variousmodifications and similar arrangements included within the spirit andscope of the appended claims, which are to be accorded with the broadestinterpretation so as to encompass all such modifications and similarstructures.

1. An image sensing device receiving an incident light having anincident angle and photo signals formed thereby, comprising: a microprism and a micro lens adjusting said incident angle and converging saidincident light, respectively; a photo sensor converting said photosignals into electronic signals; and an IC stacking layer processingsaid electronic signals.
 2. The image sensing device according to claim1, wherein said incident light further has a chief ray angle (CRA)formed thereby, and said micro prism decreases said chief ray angle(CRA) of said incident light.
 3. The image sensing device according toclaim 1, wherein said micro prism is formed by one of dielectricmaterial and polymer material.
 4. The image sensing device according toclaim 1, wherein said micro prism has a width in the order ofmicrometers, so is said photo senor.
 5. The image sensing deviceaccording to claim 1 further comprising an intermediate layer separatingsaid micro lens and said micro prism for increasing a refractiveness ofsaid incident light.
 6. The image sensing device according to claim 5,wherein said intermediate layer is formed by one selected from the groupconsisting of silicon dioxide, silicon nitride, silicon oxy-nitride andpolymer material.
 7. The image sensing device according to claim 5,wherein said intermediate layer comprises a plurality of spacers.
 8. Theimage sensing device according to claim 5, wherein said intermediatelayer comprises a plurality of color filters.
 9. The image sensingdevice according to claim 5, wherein said image sensing device along adirection of said incident light comprises: said micro lens disposedabove said intermediate layer; said intermediate layer disposed abovesaid micro prism; said micro prism disposed above said IC stackinglayer; and said IC stacking layer disposed above said photo sensor. 10.The image sensing device according to claim 5, wherein an arrangement ofsaid image sensing device along a direction of said incident lightcomprises: said micro prism disposed above said intermediate layer; saidintermediate layer disposed above said micro lens; said micro lensdisposed above said IC stacking layer; and said IC stacking layerdisposed above said photo sensor.
 11. The image sensing device accordingto claim 1, wherein said micro prism, said micro lens, and said photosensor are configured in a non-decenter arrangement.
 12. The imagesensing device according to claim 1, wherein said micro prism, saidmicro lens, and said photo sensor are configured in a decenterarrangement.
 13. The image sensing device according to claim 12, whereinsaid decenter arrangement comprises a regular decenter arrangement andan irregular decenter arrangement.
 14. The image sensing deviceaccording to claim 1, wherein an arrangement of said image sensingdevice along a direction of said incident light comprises: said microprism disposed above said micro lens; said micro lens disposed abovesaid IC stacking layer; and said IC stacking layer disposed above saidphoto sensor.
 15. A method for manufacturing an image sensing device,comprising the steps of: providing a substrate; forming a photo sensoron said substrate by an IC process; forming an IC stacking layer on saidphoto sensor by an IC process; forming a micro lens on said IC stackinglayer by an integrated optical process; and forming a micro prism onsaid micro lens by an integrated optical process.
 16. A method formanufacturing an image sensing device, comprising the steps of:providing a substrate; forming a photo sensor on said substrate by afirst IC process; forming an IC stacking layer on said photo sensor by asecond IC process; forming a micro prism on said IC stacking layer by afirst integrated optical process; forming an intermediate layer on saidmicro prism by a second integrated optical process; and forming a microlens on said intermediate layer by a third integrated optical process.17. A method for manufacturing an image sensing device, comprising thesteps of: providing a substrate; forming a photo sensor on saidsubstrate by a first IC process; forming an IC stacking layer on saidphoto sensor by a second IC process; forming a micro lens on said ICstacking layer by a first integrated optical process; forming anintermediate layer on said micro lens by second integrated opticalprocess; and forming a micro prism on said intermediate layer by a thirdintegrated optical process.
 18. The method according to claim 17,wherein said substrate is a semiconductor substrate.
 19. The methodaccording to claim 17, wherein said micro prism is made of a dielectricmaterial which is pervious to light.
 20. The method according to one ofclaims 17, wherein said micro prism is manufactured by one selected fromthe group consisting of gray masking process, photoresist process andetching process.
 21. The method according to claim 17, wherein saidintermediate layer is manufactured by depositing one selected from thegroup consisting of silicon oxide, silicon nitride and siliconoxynitride with PECVD process.
 22. The method according to claim 17,wherein said intermediate layer is made of polymer material.
 23. Animage sensing module, comprising: a package lid; a plurality of microprisms disposed on said package lid and adjusting an incident angle ofan incident light; and a plurality of photo sensors converting photosignals of said incident light into electronic signals.
 24. The moduleaccording to claim 23, wherein each of said plurality of photo sensorscomprises a micro lens integrated therewith.
 25. The module according toclaim 23, wherein a chief ray angle (CRA) of said incident light isadjusted by varying a dimension of each of said plurality of microprisms.
 26. The module according to claim 23, wherein each of saidplurality of micro prisms is formed by one of dielectric material andpolymer material.
 27. The module according to claim 23, wherein each ofsaid plurality of micro prisms has a width in the order of micrometers.28. The module according to claim 23, wherein a dimension of each ofsaid plurality of micro prisms is varied with its position in saidpackage lid.